| The influence of interfacial barrier engineering on the resistance switching of In2O3：SnO2/TiO2/In2O3：SnO2 device |
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| 引用本文： | 刘紫玉,张培健,孟洋,李栋,孟庆宇,李建奇,赵宏武. The influence of interfacial barrier engineering on the resistance switching of In2O3：SnO2/TiO2/In2O3：SnO2 device[J]. 中国物理 B, 2012, 21(4): 47302-047302. DOI: 10.1088/1674-1056/21/4/047302 |
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| 作者姓名： | 刘紫玉 张培健 孟洋 李栋 孟庆宇 李建奇 赵宏武 |
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| 作者单位： | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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| 基金项目： | Project supported by the National Basic Research Program of China （Grant No. 2009CB930803）, the National Natural Science Foundation of China （Grant No. 10834012）, and the Innovation Foundation of the Chinese Academy of Sciences （Grant No. KJCX2-YW-W24）. |
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| 摘 要： | The I-V characteristics of In2O3：SnO2/TiO2/In2O3：SnO2 junctions with different interracial barriers are inves- tigated by comparing experiments. A two-step resistance switching process is found for samples with two interfacial barriers produced by specific thermal treatment on the interfaces. The nonsynchronous occurrence of conducting filament formation through the oxide bulk and the reduction in the interracial barrier due to the migration of oxygen vacancies under the electric field is supposed to explain the two-step resistive switching process. The unique switching properties of the device, based on interracial barrier engineering, could be exploited for novel applications in nonvolatile memory devices.
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| 关 键 词： | 导电装置 界面势垒 开关过程 氧化铟 SnO2 电阻 工程 非易失性存储器 |
| 收稿时间： | 2011-10-28 |
The influence of interfacial barrier engineering on the resistance switching of In2O3:SnO2/TiO2/In2O3:SnO2 device |
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| Liu Zi-Yu,Zhang Pei-Jian,Meng Yang,Li Dong,Meng Qing-Yu,Li Jian-Qi,Zhao Hong-Wu. The influence of interfacial barrier engineering on the resistance switching of In2O3:SnO2/TiO2/In2O3:SnO2 device[J]. Chinese Physics B, 2012, 21(4): 47302-047302. DOI: 10.1088/1674-1056/21/4/047302 |
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| Authors: | Liu Zi-Yu Zhang Pei-Jian Meng Yang Li Dong Meng Qing-Yu Li Jian-Qi Zhao Hong-Wu |
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| Affiliation: | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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| Abstract: | The I-V characteristics of In2O3:SnO2/TiO2/In2O3:SnO2 junctions with different interfacial barriers are investigated by comparing experiments. A two-step resistance switching process is found for samples with two interfacial barriers produced by specific thermal treatment on the interfaces. The nonsynchronous occurrence of conducting filament formation through the oxide bulk and the reduction in the interfacial barrier due to the migration of oxygen vacancies under the electric field is supposed to explain the two-step resistive switching process. The unique switching properties of the device, based on interfacial barrier engineering, could be exploited for novel applications in nonvolatile memory devices. |
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| Keywords: | resistance switching interfacial Schottky barrier oxygen vacancy two-step switching |
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