Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns |
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Authors: | Zhou Xun Luo Zi-Jiang Guo Xiang Zhang Bi-Chan Shang Lin-Tao Zhou Qing Deng Chao-Yong Ding Zhao |
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Institution: | 1. College of Science, Guizhou University, Guiyang 550025, China;2. School of Physics and Electronics Science, Guizhou Normal University, Guiyang 550001, China;3. School of Education Administration, Guizhou College of Finance and Economics, Guiyang 550004, China |
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Abstract: | Surface segregation is studied via the evolution of reflection high-energy electron diffraction (RHEED) patterns under different values of As4 BEP for InGaAs films. When the As4 BEP is set to be zero, the RHEED pattern keeps a 4×3/(n×3) structure with increasing temperature, and surface segregation takes place until 470 ℃. The RHEED pattern develops into a metal-rich (4×2) structure as temperature increases to 495 ℃. The reason for this is that surface segregation makes the In inside the InGaAs film climb to its surface. With the temperature increasing up to 515 ℃, the RHEED pattern turns into a GaAs(2×4) structure due to In desorption. While the As4 BEP comes up to a specific value (1.33×10-4 Pa-1.33×10-3 Pa), the surface temperature can delay the segregation and desorption. We find that As4 BEP has a big influence on surface desorption, while surface segregation is more strongly dependent on temperature than surface desorption. |
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Keywords: | reflection high-energy electron diffraction InGaAs films surface segregation surface desorption |
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