| Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC （0001） wafers |
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| 引用本文： | 郝昕,陈远富,李萍剑,王泽高,刘竞博,贺加瑞,樊睿,孙继荣,张万里,李言荣. Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC （0001） wafers[J]. 中国物理 B, 2012, 21(4): 46801-046801. DOI: 10.1088/1674-1056/21/4/046801 |
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| 作者姓名： | 郝昕 陈远富 李萍剑 王泽高 刘竞博 贺加瑞 樊睿 孙继荣 张万里 李言荣 |
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| 作者单位： | [1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China [2]Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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| 基金项目： | Project supported by the Program for New Century Excellent Talents in University （Grant No. NCET-10-0291）, the Fundamental Research Funds for the Central Universities （Grant Nos. ZYGX2009X005 and ZYGX2010J031）, the Startup Research Project of University of Electronic Science and Technology of China （Grant No. Y02002010301041）, and the National Natural Science Foundation of China （Grant Nos. 50832007 and 11074285）. |
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| 摘 要： | Epitaxial graphene is synthesized by silicon sublimation from the Si-terminated 6H–SiC substrate. The effects of graphitization temperature on the thickness and surface morphology of epitaxial graphene are investigated. X-ray photoelectron spectroscopy spectra and atomic force microscopy images reveal that the epitaxial graphene thickness increases and the epitaxial graphene roughness decreases with the increase in graphitization temperature. This means that the thickness and roughness of epitaxial graphene films can be modulated by varying the graphitization temperature. In addition, the electrical properties of epitaxial graphene film are also investigated by Hall effect measurement.
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| 关 键 词： | epitaxial graphene thickness morphology graphitization temperature |
| 收稿时间： | 2011-11-24 |
Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers |
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| Hao Xin,Chen Yuan-Fu,Li Ping-Jian,Wang Ze-Gao,Liu Jing-Bo,He Jia-Rui,Fan Rui,Sun Ji-Rong,Zhang Wan-Li,Li Yan-Rong. Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers[J]. Chinese Physics B, 2012, 21(4): 46801-046801. DOI: 10.1088/1674-1056/21/4/046801 |
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| Authors: | Hao Xin Chen Yuan-Fu Li Ping-Jian Wang Ze-Gao Liu Jing-Bo He Jia-Rui Fan Rui Sun Ji-Rong Zhang Wan-Li Li Yan-Rong |
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| Affiliation: | 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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| Abstract: | Epitaxial graphene is synthesized by silicon sublimation from the Si-terminated 6H-SiC substrate. The effects of graphitization temperature on the thickness and surface morphology of epitaxial graphene are investigated. X-ray photoelectron spectroscopy spectra and atomic force microscopy images reveal that the epitaxial graphene thickness increases and the epitaxial graphene roughness decreases with the increase in graphitization temperature. This means that the thickness and roughness of epitaxial graphene films can be modulated by varying the graphitization temperature. In addition, the electrical properties of epitaxial graphene film are also investigated by Hall effect measurement. |
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| Keywords: | epitaxial graphene thickness morphology graphitization temperature |
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