首页 | 本学科首页   官方微博 | 高级检索  
     检索      


The effects of post-thermal annealing on the optical parameters of indium-doped ZnO thin films
Authors:Peng Li-Ping  Fang Liang  Wu Wei-Dong  Wang Xue-Min  Li Li
Institution:1. Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China;2. Department of Applied Physics, Chongqing University, Chongqing 400030, China;3. College of Mathematics and Physics, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
Abstract:Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400 ℃ to 800 ℃ in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses of the films before and after annealing using a nonlinear programming method, and the effects of the annealing temperatures on the optical parameters and the thickness are investigated. The optical band gap is determined from the absorption coefficient. The calculated results show that the film thickness and optical parameters both increase first and then decrease with increasing annealing temperature from 400 ℃ to 800 ℃. The band gap of the as-deposited ZnO:In thin film is 3.28 eV, and it decreases to 3.17 eV after annealing at 400 ℃. Then the band gap increases from 3.17 eV to 3.23 eV with increasing annealing temperature from 400 ℃ to 800 ℃.
Keywords:ZnO thin films  optical constants  annealing  transmittance spectra
本文献已被 CNKI 维普 等数据库收录!
点击此处可从《中国物理 B》浏览原始摘要信息
点击此处可从《中国物理 B》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号