Electronic properties of Gd@C82 metallofullerene peapods: (Gd@C82)n@SWNTs

Electronic properties of Gd@C₈₂ metallofullerene peapods, (Gd@C₈₂)_n@SWNTs, were investigated by electron energy-loss spectroscopy (EELS), scanning tunneling microscopy and spectroscopy (STM/STS), and field-effect transistor (FET) transport measurements. The results indicate that the electronic structure of Gd@C₈₂ metallofullerene peapods is completely different from that of intact single-walled nanotubes (SWNTs). For example, Gd@C₈₂-peapod-FETs show ambipolar behavior which is not observed in the empty SWNT-FETs under our experimental conditions. Furthermore, in semiconducting nanotubes the band gap can be varied from ∼0.5 to ∼0.1 eV using inserted Gd@C₈₂ endohedral metallofullerenes with a spatial periodicity of 1.1 to 8.0 nm, depending on the density of the fullerenes. The present findings suggest that metallofullerene peapods may point the way toward novel electronic devices. Received: 6 September 2002 / Accepted: 25 October 2002 / Published online: 10 March 2003 RID="*" ID="*"Corresponding author. Fax: +81-52/789-1169, E-mail: noris@cc.nagoya-u.ac.jp