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基于硅雪崩光电二极管的双光子吸收实验
引用本文:左娅妮,李政勇,杨峥,刘未华,陈长权,吴家盛.基于硅雪崩光电二极管的双光子吸收实验[J].红外与激光工程,2014,43(12):3928-3931.
作者姓名:左娅妮  李政勇  杨峥  刘未华  陈长权  吴家盛
作者单位:1.北京交通大学发光与光信息技术教育部重点实验室,北京100044
基金项目:国家自然科学基金,新世纪优秀人才支持计划,全国优秀博士学位论文作者专项资助
摘    要:研究了硅雪崩光电二极管(APD)对光通信波段近红外光子在不同频率、强度,以及APD 不同偏压下的双光子吸收效应(TPA)。通过实验详细测量了光频率从186.3 THz 到196.1 THz 变化时APD的TPA 效率,结果表明:随着入射光频率的不断增加,TPA 效率呈现出先增大、后减小的规律,并且在190.5 THz 附近达到最优效率。此外,在实验中观察到,随着入射光强的增大,TPA 效率也呈现出先增大、后减小的现象(此实验中的峰值光强度约10 mW)。

关 键 词:双光子吸收    单光子探测    硅雪崩光电二极管
收稿时间:2014-04-10

Experimental investigation on two-photon absorption in silicon avalanche photodiode
Zuo Yani,Li Zhengyong,Yang Zheng,Liu Weihua,Chen Changquan,Wu Jiasheng.Experimental investigation on two-photon absorption in silicon avalanche photodiode[J].Infrared and Laser Engineering,2014,43(12):3928-3931.
Authors:Zuo Yani  Li Zhengyong  Yang Zheng  Liu Weihua  Chen Changquan  Wu Jiasheng
Institution:1.Key Laboratory of Luminescence and Optical Information of Ministry of Education,Beijing Jiaotong University,Beijing 100044,China
Abstract:Two-photon absorption (TPA) in Si avalanche photodiode (APD) was investigated for infrared photon in 1550-nm telecom band with different frequencies, intensities, under different bias voltage. By measurement of the TPA efficiency for photon frequency from 186.3 to 196.1 THz in detail, it was found that it decreases when the photon frequency goes up while a certain optimal TPA efficiency is around 190.5 THz for the APD under test. It can be observed from the experiments that the TPA efficiency increases until a certain intensity (The peak value of light intensity in this experiment is less than 10 mW) and then it decreases.
Keywords:two-photon absorption  single photon detection  Si- APD
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