Saturation Behaviour of In – Ga – As Melts and Growth of In.53Ga.47As Lattice-matched to (001) InP Substrates

This paper presents the saturation behaviour of In – Ga – As melts with monocrystalline GaAs. The coulometric As-analysis confirmed that the source-seed-technique produces In – Ga – As melts of defined compositions. The growth results of the step cooling technique applying both the source-seed technique and the single phase melts are compared.