Abstract: | Conductivity, Hall-effect measurements were performed on δ-phase In2Se3 single crystals, grown by the Bridgman method over the temperature range 150–428 K, in the directions perpendicular and parallel to the c-axis. The anisotropy of the electrical conductivity and of the Hall coefficient of n-type In2Se3 had been investigated. The values of the Hall coefficient and electrical conductivity at room temperature spreads from an order of RH11 = 1.36 × 104 cm3/coul, σ11 = 4.138 × 10−3 Ω−1 cm−1 and RH = 66.55 × 104 cm3/coul, σ = 0.799 × 10−3 Ω−1 cm−1 for parallel and perpendicular to c-axis, respectively. The temperature dependence of Hall mobility and carrier concentration are also studied. |