| Abstract: | Growth of InP layers by MOVPE using trimethylindium-trimethylamine (TMIn–TMN) is described. Low temperature photoluminescence results reveal the high crystal quality indicated by the well resolved excitonic spectra and high internal quantum efficiency. A strong near-gap luminescence degradation with decreasing substrate temperature during the growth corresponds with the increasing deep level concentration estimated by the DLTS-investigations. In the specimens prepared at higher temperatures carbon and zinc are believed to be the main residual acceptors. From C–V data free carrier concentrations of 1015 cm−3 were obtained. |
