Effect of Electric Field on Dielectric Properties of SnO2 Sb2O3 and their Mixed Thin Films

Thin films of various thicknesses in the MIM structure have been prepared from the the powders of SnO₂, Sb₂O₃ and (SnO₂ + Sb₂O₃) of high purity by the thermal evaporation technique in a vacuum of 10⁻⁵ Torr. Dielectric properties of SnO₂, Sb₂O₃, and their mixed thin films have been studied with ac and dc electric fields and frequency. Capacitance and loss tangent are almost independent on dc voltage upto 1.0 V for SnO₂, 10.0 V for Sb₂O₃ and 2.5 V for mixed films. These capacitors become unstable at 1.0 V for SnO₂ films and 2.5 V for mixed films. For higher film thicknesses the decay in these films starts at higher voltages. Capacitance and loss tangent increases with applied ac voltage in SnO₂, Sb₂O₃, and their mixed films. A comparison of the capacitance values of SnO₂, Sb₂O₃, and their mixed films showed that the capacitance values are less in Sb₂O₃ as compared to SnO₂ films. In mixed films the capacitance is greater than the constituent films. These studies have shown that Sb₂O₃ films are found to be more stable compared to SnO₂ and their mixed films for ac and dc voltages. The results thus obtained on SnO₂, Sb₂O₃, and their films are presented and discussed.