| Abstract: | The structural changes in thermal SiO2 films grown at 1123–1173 K in a double walled furnace tube with chlorine between the inner and the outer tube are studied. The layers have a higher degree of crystallinity in comparison with the layers grown by standard high temperature dry oxidation (1273 K). A difference between the crystalline type structures of SiO2 films on p- and n-Si is observed. The increase of the growth temperature from 1123 to 1273 K increases the variety of crystalline structures in the layers but decreases strongly their quantity and makes the films predominantly amorphous. |
