| Abstract: | InSb LPE layers were grown on (111) InSb substrates, their phase diagram and growth rates studied. The InSb activity coefficient α(T), determined by fitting the experimental data, had a value of 2556–11.11 · T cal · mole−1. The terraces on the surface were reduced by increasing the temperature to 350 °C. Hall measurements of InSb/CdTe heterostructure failed due to the high Te segregation. The carrier concentration of these InSb epilayers, however, was determined by C-V measurements with values between 7.5 · 1014 cm−3 and 5 · 1015 cm−3. |
