Morphology and Microstructure of TiN and Ti(N,C) Thin Layers

Thin layers of TiN and Ti(N, C) solid solution were obtained by the CVD process, making use of the following gas mixtures: TiCl₄–N₂–H₂ for TiN and TiCl₄–CCl₄–N₂–H₂ for Ti(N, C). The thin layers deposition processes were carried out in the temperature range from 900–1450 °C. As growth substrates were used polycrystalline Al₂O₃, graphite, W, Mo and Cu plates and also single crystal Al₂O₃ (leucosapphire), (111) Cu and (111) Si plates. The influence of certain technological factors on the morphology of the layers obtained was studied. TEM examinations were also made of the microstructure of the thin TiN layers and the Ti(N, C) solid solution layers deposited on polycrystalline and single crystal Cu plates. Factors responsible for the presence of a high density of dislocations in the tested films were ascertained.