Secondary ion emission from Si bombarded with large Ar cluster ions under UHV conditions |
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Authors: | Satoshi Ninomiya Kazuya Ichiki Yoshiro Honda Takaaki Aoki Jiro Matsuo |
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Institution: | a Quantum Science and Engineering Center, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan b Department of Nuclear Engineering, Kyoto University, Sakyo, Kyoto 606-8501, Japan c Department of Electronic Science and Engineering, Kyoto University, Nishikyo, Kyoto 615-8510, Japan d CREST, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075, Japan |
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Abstract: | Si was bombarded with size-selected 40 keV Ar cluster ions and positive secondary ions were measured using the time-of-flight technique under high and ultra-high vacuum (HV and UHV respectively) conditions. Si+ ions were main species detected under the incidence of 40 keV Ar cluster ions, and the yields of Si cluster ions such as Si4+ were also extremely high under both conditions. On the other hand, oxidized secondary ions such as SiO+ were detected with high intensity only under the HV condition. The yield ratios of oxidized ions decreased in UHV to less than 1% of their values in HV. The effect of residual gas pressure on Si cluster ion yields is relatively low compared to oxidized ions, and the UHV condition is required to obtain accurate secondary ion yields. |
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Keywords: | Cluster ion TOF Si Secondary ion UHV |
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