Metal-assisted SIMS and cluster ion bombardment for ion yield enhancement |
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Authors: | A Heile N Wehbe P Bertrand L Houssiau R De Mondt HF Arlinghaus |
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Institution: | a Physikalisches Institut, Westfälische Wilhelms-Universität, Wilhelm-Klemm-Str. 10, D-48149 Münster, Germany b PCPM, Université catholique de Louvain, Croix du Sud 1, B-1348 Louvain-la-Neuve, Belgium c LISE Laboratory, University of Namur, Rue de Bruxelles 61, B-5000 Namur, Belgium d Department Chemistry (CDE), University of Antwerp, Universiteitsplein1, B-2610 Wilrijk, Belgium |
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Abstract: | In addition to structural information, a detailed knowledge of the local chemical environment proves to be of ever greater importance, for example for the development of new types of materials as well as for specific modifications of surfaces and interfaces in multiple fields of materials science or various biomedical and chemical applications. But the ongoing miniaturization and therefore reduction of the amount of material available for analysis constitute a challenge to the detection limits of analytical methods. In the case of time-of-flight secondary ion mass spectrometry (TOF-SIMS), several methods of secondary ion yield enhancement have been proposed. This paper focuses on the investigation of the effects of two of these methods, metal-assisted SIMS and polyatomic primary ion bombardment. For this purpose, thicker layers of polystyrene (PS), both pristine and metallized with different amounts of gold, were analyzed using monoatomic (Ar+, Ga+, Xe+, Bi+) and polyatomic (SF5+, Bi3+, C60+) primary ions. It was found that polyatomic ions generally induce a significant increase of the secondary ion yield. On the other hand, with gold deposition, a yield enhancement can only be detected for monoatomic ion bombardment. |
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Keywords: | TOF-SIMS MetA-SIMS Cluster bombardment Polyatomic ions Polymers Near-surface energy deposition |
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