UV assisted low temperature nitridation and post deposition oxidation technique for hafnium oxide gate dielectric |
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Authors: | S.Y. Son J.H. Jang K. Ramani R.K. Singh |
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Affiliation: | a Materials Science and Engineering, University of Florida, Gainesville, FL 32611, United States b Advanced Micro Devices AMD-IBM Research Alliance, Sunnyvale, CA 94088, United States |
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Abstract: | An evaluation of a low temperature method (∼400 °C) for synthesis of nitrogen incorporated hafnia gate dielectric has been reported. This method is based on metal film growth in ammonia ambient and subsequent oxidation under ultraviolet (UV) irradiation. X-ray photoelectronic spectroscopy confirmed the presence of nitrided interface layer with a thickness of ∼12 ?. Equivalent oxide thickness values of around 11.5 ? and leakage current densities lower than 1 × 10−4 A/cm2 at an operation voltage (−1 V) were achieved. The post deposition ultraviolet oxidation process was performed to check the interface oxidation resistance. The interface growth rate showed that as the interface bonding characteristics changed from Si-N to Si-O predominant bonding system of nitrogen incorporated films, the activation energy for oxygen diffusion changed from 18.0 kJ/mol to 9.8 kJ/mol and the activation energy of undoped hafnia films was 2.3 kJ/mol in every growth region. |
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Keywords: | Nitrogen incorporation Hafnium oxide Gate dielectric Oxygen diffusion activation energy |
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