Formation and escaping of positronium in porous SiO2 films at low temperature

Positronium formation and escaping has been studied in porous silica thin films at temperature ranging from 13 to 300 K by 2-3 gamma ratio of positronium (3γ-PAS) measurements. Nanoporous silica thin films were deposited by spin coating on p-type (1 0 0) Si substrates and thermal treated in air at temperatures of 600 °C. Two different molar ratios of porogen (polyvinylpyrrolidone) were used in the TEOS-ethanol mixture to obtain samples with close porosity and connected porosity with the surfaces. In both types of sample a reduction of the 2-3 gamma ratio of positronium was observed by decreasing the temperature. This finding, in disagreement with the theoretical expectation, is discussed on the basis of the possible quenching mechanisms.