Clusterization of vacancy defects in ZnO irradiated with 2 MeV O |
| |
| Authors: | A. Zubiaga F. Tuomisto C. Jagadish |
| |
| Affiliation: | a Laboratory of Physics, Helsinki University of Technology, Espoo, Finland
b Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, Australia |
| |
| Abstract: | Slow positrons have been used to study ZnO layers grown on a-axis sapphire and irradiated by 2 MeV O+ ions to fluences from 1012 cm−2 to 1017 cm−2. At low fluences Zn vacancies are observed, and their introduction rate is estimated as 2000 cm−1. At the highest fluences of 1016-1017 cm−2 vacancy clusters are formed. The extent of the primary damage and its recovery is discussed. |
| |
| Keywords: | Positron Spectroscopy Point-Defects ZnO Irradiation Thin-Films |
| 本文献已被 ScienceDirect 等数据库收录！ |
