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Formation mechanisms of GaN nanorods grown on Si(1 1 1) substrates |
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| Authors: | YH Kwon SY Ryu CH You |
| Institution: | a Quantum Functional Semiconductor Research Center, Dongguk University, 3-26 Chungku Pildong, Seoul 100-715, Republic of Korea b Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea c Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea |
| Abstract: | Scanning electron microscopy (SEM) images, transmission electron microscopy (TEM) images, and selected-area electron diffraction (SAED) patterns showed that vertically well aligned GaN nanorods with c-axis-oriented crystalline wurzite structures were grown on Si(1 1 1) substrates by using hydride vapor phase epitaxy. The high-resolution TEM (HRTEM) images showed that the crystallized GaN nanorods contained very few defects and that they were consisted of  , {0 0 0 1}, and { } facets. The formation mechanisms for the GaN nanorods grown on Si(1 1 1) substrates are described on the basis of the SEM, TEM, SAED pattern, and HRTEM results. |
| Keywords: | 61 46 Km 61 72 uj 68 37 Lp 81 15 Kk |
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