Cluster SIMS using metal cluster complex ions |
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| Authors: | Yukio Fujiwara Kouji Kondou Kouji Watanabe Naoaki Saito Toshiyuki Fujimoto Shingo Ichimura |
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| Institution: | a National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
b Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan |
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| Abstract: | Metal cluster complexes are chemically synthesized organometallic compounds, which have a wide range of chemical compositions with high molecular weight. Using a metal cluster complex ion source, sputtering characteristics of silicon bombarded with normally incident Ir4(CO)7+ ions were investigated. Experimental results showed that the sputtering yield at 10 keV was 36, which is higher than that with Ar+ ions by a factor of 24. In addition, secondary ion mass spectrometry (SIMS) of boron-delta-doped silicon samples and organic films of poly(methyl methacrylate) (PMMA) was performed. Compared with conventional O2+ ion beams, Ir4(CO)7+ ion beams improved depth resolution by a factor of 2.5 at the same irradiation conditions; the highest depth resolution of 0.9 nm was obtained at 5 keV, 45° with oxygen flooding of 1.3 × 10−4 Pa. Furthermore, it was confirmed that Ir4(CO)7+ ion beams significantly enhanced secondary ion intensity in high-mass region. |
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| Keywords: | Cluster SIMS Depth profiling Sputtering Metal cluster complex Ir4(CO)12 |
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