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The optical properties of ZnO/ZnMgO single quantum well grown by P-MBE |
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| Authors: | SC Su YM Lu ZZ Zhang B Yao DZ Shen DX Zhao |
| Institution: | a Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China b Graduate School of the Chinese Academy of Sciences, Beijing 100049, China c College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China |
| Abstract: | In this paper, ZnO/Zn0.9Mg0.1O single quantum well (SQW) structures were fabricated on c-plane sapphire (Al2O3) substrate by plasma-assisted molecular beam epitaxy (P-MBE). The photoluminescence (PL) peak of the SQW shifted from 3.31 to 3.37 eV as the well layer thickness was decreased from 6 to 2 nm. The spectral linewidth increases with temperature due to the scattering of excitons with acoustic and optical phonons. The transition energy of the localized exciton in the ZnO/Mg0.1Zn0.9O SQW with well width of 3 nm was found to be about 3.407 eV at 80 K, consistent with theoretical calculation. The first subband energies in the conduction and valence band were calculated to be 49 and 11 meV, respectively. |
| Keywords: | ZnMgO SQWs P-MBE ZnO |
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