Low-temperature formation of nanocrystalline SiC particles and composite from three-layer Si/C/Si film for the novel enhanced white photoluminescence |
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Authors: | C K Chung T Y Chen C W Lai |
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Institution: | (1) Department of Mechanical Engineering, Center for Micro/Nano Science and Technology, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, 701, Taiwan, Republic of China |
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Abstract: | In this article, nanocrystalline silicon carbide (nc-SiC) and composite have been synthesized at an annealing temperature
as low as 750 °C through the thermal reaction of Si/C/Si multilayers deposited on the Si(100) substrate by ultra-high-vacuum
ion beam sputtering (UHV IBS) compared with the conventional thermal formation of crystalline SiC (c-SiC) nanostructures above
1,000 °C. The evolution of microstructure and reaction between C and Si was examined by Raman spectroscopy, Fourier transform
infrared spectrometer (FTIR), high-resolution field emission scanning electron microscope (HR-FESEM), and high-resolution
transmission electron microscopy. The c-SiC nanoparticles (np-SiC) of around 20–120 nm in diameter appeared on the top and
bottom of the three-layer film with a particle density of around 2.63 × 1010 cm−2 after 750 °C annealing. The composite of nc-SiC and Si nanocrystals (nc-Si) size below 5 nm embedded in an amorphous SiC
(a-SiC) matrix appeared at the interface between the Si and C layers. Efficient thermal energy is the driving force for the
formation of nc-SiC and composite through interdiffusion between C and Si. The broad visible photoluminescence (PL) spectrum
of 350–750 nm can be obtained from the annealed composite Si/C/Si multilayer and deconvoluted into four bands of blue (~430 nm),
green (~500 nm), green–yellow (~550 nm), and orange (~640 nm) emission, corresponding to the emission origins from nc-SiC,
sp2 carbon clusters, np-SiC, and nc-Si, respectively. |
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Keywords: | |
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