Optical properties of GaInNAsSb/GaAs/GaAs1−xNx (x ≈ 10%) saturable absorber quantum wells |
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| Authors: | S. Ben Bouzid W. Zaghdoudi N. Ben Sedrine J.C. Harmand |
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| Affiliation: | a Laboratoire de Photovoltaïque et de Semiconducteurs, Centre de Recherche et des Technologies de l’Energie, B.P. 95, Hammam-Lif 2050, Tunisia
b Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nosay 91460, Marcoussis, France |
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| Abstract: | We study the effect of the GaAsN narrow QWs on the optical properties of the GaInNAsSb/GaAs QWs using photoluminescence spectroscopy. A drastic effect of the N-rich layers on the QW photoluminesecnec (PL) intensity was observed with a strong influence of the spacer thickness. In the PL spectra a broad band caused by excitonic transitions related with N-related clusters in GaAs barriers is found. Based on calculations from experimental data, we have identified the low QW peak energy to the E1-H1 transition using the shear deformation potentials report Δp/p = 0.24. |
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| Keywords: | GaInNAsSb GaAsN Molecular beam epitaxy Semiconductor saturable absorber |
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