The electronic structure ofα-B12, B12P2 and B12AS2

The electronic band structures of the rhombohedral-based boron compounds -B₁₂, B₁₂P₂ and B₁₂ As₂ have been investigated along all symmetry directions. The calculations show that the band gap, in all cases, is of the order of 2 eV, which correlates with the known color of -rhombohedral boron. The materials should be intrinsic semi-conductors, as has recently been shown experimentally. The states around the band gap in -B₁₂ are dominated by the boron 2p atomic states. The bonding in the icosahedra, as illuminated by cluster calculations, is shown to be rather similar to that in the isolated B₁₂ icosahedron. Of the intericosahedron interactions, those between B(2) and B(2) atoms are the strongest and have a bond index just above unity. In B₁₂P₂ the orbitals of the P₂ moiety make a significant contribution to the valence band edge states and the conduction band edge states also incorporate considerable (55%) phosphorus 3d orbital character. In B₁₂As₂ the arsenic 4d orbitals do not have as much effect in that crystal as do the 3d orbitals in B₁₂P₂.