| 性能优良的RCA微波功率晶体管 |
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| 引用本文： | 蔡勇,张利春,高玉芝,金海岩,叶红飞,张树丹.性能优良的RCA微波功率晶体管[J].固体电子学研究与进展,2003,23(2):178-182. |
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| 作者姓名： | 蔡勇 张利春 高玉芝 金海岩 叶红飞 张树丹 |
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| 作者单位： | 1. 北京大学微电子学研究所,北京,100871
2. 南京电子器件研究所,南京,210016 |
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| 摘 要： | 首次采用多晶硅发射区 RCA技术制备出微波功率晶体管。在工作频率为 3 .1 GHz时 ,该器件输出功率达到 6W,功率增益达到 1 0 d B。与普通多晶硅发射区 HF晶体管相比 ,此种晶体管具有电流增益 h FE随温度变化小、并且在一定温度下达到饱和的优点 ,从而可以在一定程度上抑制微波双极功率晶体管由于温度分布不均匀导致的电流集中。文中还讨论了不同的杂质激活条件对 RCA器件直流增益的温度特性的影响及对微波性能的影响
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| 关 键 词： | 微波功率晶体管 多晶硅发射区 氧化层 电流增益 |
| 文章编号： | 1000-3819(2003)02-178-05 |
| 修稿时间： | 2002年11月7日 |
RCA Microwave Power Bipolar Transistor with Excellent Performance |
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| CAI Yong,ZHANG Lichun,GAO Yuzhi,JIN Haiyan,YE Hongfei.RCA Microwave Power Bipolar Transistor with Excellent Performance[J].Research & Progress of Solid State Electronics,2003,23(2):178-182. |
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| Authors: | CAI Yong ZHANG Lichun GAO Yuzhi JIN Haiyan YE Hongfei |
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| Abstract: | A polysilicon emitter RCA microwave transistor was fabricated to fit the power application for the first time. The device gives a performance of 6 W output power and 10 dB gain at 3.1 GHz. Compared to normal poly-silicon emitter(HF) transistor, this device has a small temperature coefficient of h FE, and the h FE can arrive at its saturation value at a specific temperature. This characteristics of RCA transistor can suppress the effect of current crowding arosen from the nonuniform temperature distribution. The influence on high temperature annealing on the RCA transistor's temperature characteristics and microwave performance was discussed also. |
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| Keywords: | microwave power transistor poly-silicon emitter oxide current gain |
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