| Metamorphic growth of 1.55 μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates |
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| 作者姓名： | 李小波 黄永清 王俊 段晓峰 张瑞康 李业弘 刘正 王琦 张霞 任晓敏 |
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| 作者单位： | Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications (BUPT);State Key Laboratory of Information Photonics and Optical Communications (BUPT);Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences |
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| 基金项目： | supported by the National Natural Science Foundation of China(Nos.61274044 and61020106007);the National Basic Research Program of China(No.2010CB327600);the Natural Science Foundational Science and Technology Cooperation Projects(No.2011RR000100);the 111 Project of China(No.B07005);the Fundamental Research Funds for the Central University(No.2013RC1205);the Specialized Research Fund for the Doctoral Program of Higher Education(No.20130005130001) |
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| 摘 要： | We fabricate a Ga As-based In Ga As/In Ga As P multiple quantum wells(MQWs) laser at 1.55 μm. Using two-step growth method and thermal cyclic annealing, a thin low-temperature In P layer and a thick In P buffer layer are grown on Ga As substrates by low-pressure metal organic chemical vapor deposition technology. Then, highquality MQWs laser structures are grown on the In P buffer layer. Under quasi-continuous wave(QCW) condition, a threshold current of 476 m A and slope efficiency of 0.15 m W/m A are achieved for a broad area device with 50 μm wide strip and 500 μm long cavity at room-temperature. The peak wavelength of emission spectrum is1549.5 nm at 700 m A. The device is operating for more than 2000 h at room-temperature and 600 mA.
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| 关 键 词： | annealing fabricate metamorphic thick FWHM strip crystalline lasing operated normalized |
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