Fabrication and Optical Characterization of GaN-Based Nanopillar Light Emitting Diodes |
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Authors: | ZHU Ji-Hong ZHANG Shu-Ming SUN Xian ZHAO De-Gang ZHU Jian-Jun LIU Zong-Shun JIANG De-Sheng DUAN Li-Hong WANG Hai SHI Yong-Sheng LIU Su-Ying YANG Hui |
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Institution: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, PO Box 912, Beijing 100083Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 |
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Abstract: | InGaN/GaN-multiple-quantum-well-based light emitting diode (LED) nanopillar arrays with a diameter of approximately 200nm and a height of 700nm are fabricated by inductively coupled plasma etching using Ni self-assembled nanodots as etching mask. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence (PL) intensity is achieved after the fabrication of nanopillars, and a blue shift and a decrease of full width at half maximum of the PL peak are observed. The method of additional wet etching with different chemical solutions is used to remove the etch-induced damage. The result shows that the dilute HCl (HCl:H2O=1:1) treatment is the most effective. The PL intensity of nanopillar LEDs after such a treatment is about 3.5 times stronger than that before treatment. |
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Keywords: | 85 40 Uz 81 65 -b 81 70 Fy |
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