Ion tracks in amorphous silicon nitride |
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| Authors: | L A Vlasukova F F Komarov V N Yuvchenko V A Skuratov A Yu Didyk and D V Plyakin |
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| Institution: | (1) IRCELYON—Institut de Recherches sur la Catalyse et l’Environnement de Lyon, UMR 5256 CNRS/Universit? Lyon I, 2 Avenue Albert Einstein, 69626 Villeurbanne Cedex, France |
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| Abstract: | The morphology of the tracks of swift ions revealed in amorphous silicon nitride after treatment in an HF solution is studied.
The Si3N4/Si structures were irradiated with Fe, Kr, and W ions in the electron energy loss regime. Discontinuous tracks were recorded
upon exposure to W only, with an electron energy loss of 20.4 keV nm−1 being maximal for the conditions of our experiment. The results from calculations of the track formation in Si3N4 based on the thermal spike model are presented. |
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