Intense red phosphors for near-ultraviolet light-emitting diodes |
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| Authors: | H Y Jiao Y H Wang |
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| Institution: | 1. Department of Materials Science, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, People’s Republic of China
2. Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, People’s Republic of China
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| Abstract: | The Sr2?x Eu x Al2Si1?y Mo y O7 as a new near-ultraviolet (UV) excited phosphors were synthesized and their luminescence properties under 393-nm excitation were investigated in detail. It was indicated that Sr2?x Eu x Al2SiO7 could be effectively excited by 393 nm, and it exhibited an intense red emission at 617 nm. The introduction of Mo ion and charge compensator ion Na did not change the position of the peaks but strengthened the absorption of the phosphors at ～400 nm and strongly enhanced the emission intensity of Eu3+ under 393-nm excitations. The intense red-emitting phosphor Sr1.56Eu0.22Na0.22Al2Si0.98Mo0.02O7 with tetragonal sheet structure was obtained. Its chromaticity coordinates (0.659, 0.331) was very close to the NTSC standard values (0.67, 0.33) and its emission intensity was about 1.5 times higher than that of the commercial red phosphor Y2O2S:0.05Eu3+. This is considered to be an efficient red-emitting phosphor for near-UV InGaN-based light-emitting diodes (LEDs). |
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