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Characterization and optimization of the laser-produced plasma EUV source at 13.5 nm based on a double-stream Xe/He gas puff target |
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| Authors: | R Rakowski A Bartnik H Fiedorowicz F de Gaufridy de Dortan R Jarocki J Kostecki J Miko?ajczyk L Ry? M Szczurek P Wachulak |
| Institution: | 1. Institute of Optoelectronics, Military University of Technology, 2 Gen. Sylwestra Kaliskiego St., 00-908, Warsaw, Poland 2. Department of Physics, Lund University, Lund, Sweden 3. Service des Photons, Atomes et Molecules, CEA-Saclay, 91191, Gif-sur-Yvette Cedex, France 4. Institute of Plasma Physics and Laser Microfusion, 23 Hery St., 01-497, Warsaw, Poland 5. Department of Electrical and Computer Engineering, Colorado State University, 1320 Campus Delivery, Fort Collins, CO, 80523-1320, USA |
| Abstract: | The paper describes a debris-free, efficient laser-produced plasma source emitting EUV radiation. The source is based on a double-stream Xe/He gas-puff. Its properties and spectroscopic signatures are characterized and discussed. The spatio-spectral features of the EUV emission are investigated. We show a large body of results related to the intensity and brightness of the EUV emission, its spatial, temporal, and angular behavior and the effect of the repetition rate as well. A conversion efficiency of laser energy into EUV in-band energy at 13.5 nm of 0.42% has been gained. The electron temperature and electron density of the source were estimated by means of a novel method using the FLY code. The experimental data and the Hullac code calculations are compared and discussed. The source is well suited for EUV metrology purposes. The potential of the source for application in EUV lithography was earlier demonstrated in the optical characterization of Mo/Si multi-layer mirrors and photo-etching of polymers. |
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