| 硅基低维材料的可见光发射机理探讨 |
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| 引用本文： | 彭英才.硅基低维材料的可见光发射机理探讨[J].固体电子学研究与进展,1998,18(2):146-151. |
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| 作者姓名： | 彭英才 |
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| 作者单位： | 河北大学电子与信息工程系!保定，071002 |
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| 基金项目： | 河北省自然科学基金!595076 |
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| 摘 要： | Si的可见光发射是半导体发光材料研究中的一个新课题。文中从能带工程的角度出发，着重讨论了SiGe应变层异质结、Si量子细线、Si纳米团簇以及Si－O化合物年维体系的可见光发射机理，并进而探讨了提高这些娃基低线材料发光效率的可能途径。
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| 关 键 词： | SiGe应变层异质结 Si量子细线 Si纳米团簇 Si－O化合物零维体系 可见发光 |
Approach on Visible Light Emission Mechanism of Si-based Low Dimensional Materials |
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| Peng Yingcai.Approach on Visible Light Emission Mechanism of Si-based Low Dimensional Materials[J].Research & Progress of Solid State Electronics,1998,18(2):146-151. |
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| Authors: | Peng Yingcai |
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| Abstract: | Visible light emission of silicon is a new subject in light emissionstudy of semiconductor materials. This paper introduces the mechanism of visiblelight emission of low dimensional materials such as SiGe strianed heterojunction,Siquantum wire, Si nanometer cluster and Si-O compound zero dimensional systembased on energy band engineering, and points out the approach to enhancing lightemission efficiency of these materials. |
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| Keywords: | SiGe Strained Heterojunction Si Quantum Wire Si Nanometer Cluster Si-O Compound Zero Dimesional System Visible Light Emission |
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