Generalization of Einstein relation for doped organic semiconductors |
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Authors: | Y-Q Peng J-H Yang F-P Lu |
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Institution: | (1) Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, Lanzhou, 730000, P.R. China |
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Abstract: | Under the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied
molecular orbital (HOMO), analytical expressions of generalized Einstein relation for electron and hole transport in doped
organic semiconductor thin films are developed. Numerical calculations show that, although traditional Einstein relation still
holds for low carrier concentrations, that is, the diffusion-coefficient-to-mobility ratio in units of kBT/q, with kB the Boltzmann’s constant, T the temperature and q the elementary charge, equals 1. But when the electron (hole) concentration
is high, the diffusion-coefficient-to-mobility ratio for electrons (holes) changes strongly with the electron (hole) concentration,
the doping level, the mean energy of LUMOs (HOMOs) of the dopant ELd (EHd) and the host EL (EH), as well as their variances. Dopants with ELd<EL (EHd>EH) affect the diffusion-coefficient-to-mobility ratio mainly in the range of low and middle carrier concentrations, while those
with ELd>EL (EHd<EH) have significant effect only in the range of high carrier concentrations. It was found that there can be a maximum in the
dependence of the diffusion-coefficient-to-mobility ratio on the quasi-Fermi energy or carrier concentration exist, for appropriate
values of the doping level, the mean energy and variance of LUMO or HOMO states of the dopant.
PACS 71.20.Rv; 72.90.+y; 73.50.-h |
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