锑化镓的光助微刻蚀及其表面氧化物的研究

用电化学和光电化学方法研究锑化镓表面的腐蚀以及锑化镓表面氧化膜的生成和溶解，锑化镓电极在一定电势下生成的氧化膜，用俄歇能谱证明，其主要成分为难溶的氧化锑，此氧化膜的存在抑制了锑化镓的进一步腐蚀，同时亦使锑化镓的半导体光电化学性能大为减弱，通过激光微刻蚀及电子显微镜的观察，在刻蚀剂中添加酒石酸，柠檬酸和氢氟酸等试剂，可使刻蚀形得改善，实验研究了锑化镓的平带电势的测定。

Photoassisted Microetching of GaSb with Focused Laser Light and the Investigation of its Surface Oxides

GaSb is an important compound semiconductor. This paper reports theetching of GaSb, and the formation and dissolution of the oxidized layer of GaSb usingelectrochemical and photoelectrochemical methods. The major composition of the GaSboxidized layer was found to be antimony okides which are difficult to dissolve in aqueoussolution. This layer could prevent the surface from being further etched, and could makethe semiconductor losing its photoelectrochemical properties. Addition of tartaric acid,citric acid and hydrofluoric acid into the solution improved the etching. The method ofmeasuring the flatband potential of the interface between GaSb and electrolyte has alsobeen investigated.