Surface oxidation of high-surface-area silicon carbide: FT-IR studies

The surface of ultrafine silicon carbide powders, prepared by a laser-driven gas-phase reaction was studied as a self-supporting disk by FT infrared spectrometry. After evacuation silicon and carbon atoms located at the surface give rise tovSiH andvCH bands. When heating in oxygen, subtraction spectra showed features which could be strictly correlated with a progressive growth of a silica layer: SiH and CH bands were replaced by new bands characteristic of amorphous silica and the typical band of surface silanol groups on silica (3745 cm^–1) simultaneously increased.