On diffusion lengths of Ga adatoms on AlAs(111) and GaAs(111) surfaces |
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| Authors: | N V Sibirev V G Dubrovskii E B Arshanskii G E Cirlin Yu B Samsonenko and V M Ustinov |
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| Institution: | (1) Key Laboratory of Information Photonics and Optical Communications (Ministry of Education), Beijing University of Posts and Telecommunications, P.O. Box 66, 100876 Beijing, China;(2) St.-Petersburg Academic University RAS, Khlopina 8/3, 194021 St.-Petersburg, Russia;(3) Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, 194021, St.-Petersburg, Russia;(4) CNRS-LPN, Route de Nozay, 91460 Marcoussis, France;(5) Department OptoGaN, Institut d’Electronique Fondamentale, UMR 8622 CNRS, 91405 Orsay Cedex, France; |
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| Abstract: | An expression for calculating the effective diffusion length from the measured values of the height and density of nanowhiskers
is derived in terms of the diffusion growth model. From experimental data for GaAs nanowhisker MBE growth, the diffusion lengths
of Ga adatoms on the GaAs(111) and AlAs(111) surfaces are evaluated. Under typical growth conditions, the value of the Ga
diffusion length is found to be about several hundreds of nanometers. |
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