Light scattering in GaAs parabolic quantum wells |
| |
| Institution: | 1. School of Materials Science and Engineering, Hongik University, Jochiwon, Sejong 339-701, Republic of Korea;2. Department of Chemical Engineering, Dankook University, Yongin, Gyeonggi 448-701, Republic of Korea;1. Chemistry Course, Faculty of Science, Ehime University, 2-5 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan;2. Materials Sciences Research Center, Japan Atomic Energy Agency, 1-1-1 Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan;3. Synchrotron Radiation Research Center, Nagoya University, 1 Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan |
| |
| Abstract: | We report the observation of electronic light scattering in photoexcited parabolic GaAsAlxGa1-xAs quantum wells. The spectra show sharp peaks corresponding to transitions between sublevels in the conduction band. The precision of the measurements allows a test of the simple harmonic oscillator model for the energy level structure. The energy gap and alloy composition of the AlxGa1-xAs layers are determined from resonance Raman scattering by optical phonons. We use these results to calculate the conduction band offset Qe. We obtain Qe ∼ 0.7, in agreement with recent experiments in square quantum wells. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
