A new emission band in the near band edge region in ZnSe single crystal |
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| Affiliation: | 1. Institute of Physics, University of Tartu, W. Ostwald Str. 1, Tartu 50411, Estonia;2. Institute of Solid State Physics, University of Latvia, Kengaraga 8, Riga LV-1063, Latvia |
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| Abstract: | An emission band with FWHM of 2.7 meV has been observed at 2.8002 eV. Its emission intensity is proportional to the 1.2 power of the excitation intensity. Excitation spectrum and selective excitation spectrum do not show any additional spectral structure. It is proposed that the origin of this emission is the scattering of excitons by other free particles at a structural defect with slightly lower potential for free particles and free excitons. |
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