Optically induced changes in the sub-band gap absorption of hydrogenated amorphous silicon |
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| Affiliation: | 1. School of Advanced Materials, Green Energy and Sensor Systems (SAMGESS), Indian Institute of Engineering Science and Technology (IIEST) Shibpur, Howrah 711103, India;2. Department of Physics, Indian Institute of Engineering Science and Technology (IIEST) Shibpur, Howrah 711103, India |
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| Abstract: | Measurements of infrared absorption in thin (120nm) films of amorphous hydrogenated silicon subjected to light soaking were performed by Fourier transform infrared spectroscopy. Light exposure increased absorption in the region 0.3 to 0.4 eV but reduced it between 0.40 and 0.43 eV. These effects, which were room temperature annealable, indicate that at least two kinds of electronic states are involved. |
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