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Optical second-harmonic generation of modulation doped Ga0.8Al0.2As film grown by molecular beam epitaxy
Affiliation:1. School of Environmental Science and Engineering, Guangdong University of Technology, Guangzhou 510006, China;2. School of Environment, Tsinghua University, Beijing 100084, China;3. Key Laboratory for Yellow River and Huaihe River Water Environment and Pollution Control, School of Environment, Henan Normal University, Xinxiang 453007, China;4. Faculty of Environmental and Biological Engineering, Guangdong University of Petrochemical Technology, Maoming 525000, China;1. State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing, 100085, China;2. University of Chinese Academy of Sciences, Beijing, 100049, China;3. School of Environment, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China;4. Institute of Environment and Health, Jianghan University, Wuhan, 430056, China;1. Key Laboratory of Drug Prevention and Control Technology of Zhejiang Province Zhejiang Police College, 555 Binwen Road, Binjiang District, Hangzhou, 310053, Zhejiang Province, PR China;2. Key Laboratory of Drug Control and Monitoring, National Anti-Drug Laboratory Zhejiang Regional Center, 555 Binwen Road, Binjiang District, Hangzhou, 310053, Zhejiang Province, PR China;1. School of Hydraulic and Environmental Engineering, Changsha University of Science & Technology, Changsha 410114, China;2. Key Laboratory of Dongting Lake Aquatic Eco-Environmental Control and Restoration of Hunan Province, Changsha 410114, China;1. Nanophotonics Research Center, Shenzhen Key Laboratory of Micro-Scale Optical Information Technology, Institute of Microscale Optoelectronics & State Key Laboratory of Radio Frequency Heterogeneous, Shenzhen University, Shenzhen 518060, China;2. Depart of Neurosurgery, The First Affiliated Hospital of Shenzhen University, Shenzhen Second People''s Hospital, Shenzhen 518060, China;3. The Institute of Translational Medicine, Tianjin Union Medical Center of Nankai University, Tianjin 300121, China;4. Research Center for Humanoid Sensing, Zhejiang Laboratory, Hangzhou 311100, China
Abstract:Absolute values of the second-order nonlinear susceptibility of modulation doped (100) Ga0.8Al0.2As are measured through a Q-switched Nd:YAG laser with self-calibrated power emanating in p-polarization. The angular variation of the reflecting second-harmonic wave agrees satisfactorily with the Bloembergen and Pershan theory. The nonlinear susceptibility of Ga0.8Al0.2As grown by MBE method is 20% larger than that of GaAs. A quasi-photon counting technique exploited in this experiment provides the possibility to detect the second harmonic reflecting coefficients as low as 10-21cm2/watt.
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