Multiphonon absorption in InP |
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| Institution: | 1. Research Center of the Ministry of Education for High Gravity Engineering and Technology, Beijing University of Chemical Technology, Beijing 100029, PR China;2. State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029, PR China;3. PetroChina Co Ltd Daqing Refining & Chemical Company, Daqing 163411, PR China;1. School of Microelectronics, Dalian University of Technology, Dalian 116024, China;2. Engineering Research Center of Nuclear Technology Application (East China University of Technology), Ministry of Education, Nanchang, 330013, China;3. Engineering Research Center of New Energy Technology and Equipment of Jiangxi Province (East China University of Technology), Nanchang, 330013, China;4. State Key Laboratory on Integrated Optoelectronics, School of Electronic Science and Engineering, Jilin University, Changchun, 130012, China;5. School of Physics, Dalian University of Technology, Dalian 116024, China;1. Institute of Optics and Electronics, Chinese Academy of Sciences, No.1 Guangdian Road, Chengdu, 610209, China;2. University of Chinese Academy of Sciences, Beijing, 100049, China |
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| Abstract: | IR absorption measurements have been made using a high resolution Fourier-transform spectrometer on crystals of InP in the region of (400–4000)cm-1 at temperature between 11–300k. Very weak, new absorption bands, their absorption coefficients are of ∼10-1cm-1, were observed at 996cm-1, 965cm-1, 932cm-1, 838cm-1, 776cm-1, 742cm-1, 718cm-1, 590cm-1, 558cm-1 and 538cm-1. The frequencies and temperature dependence of these weak bands indicate that they arise from three-phonon processes and appropriate assignments are given. We observed using IR absorption technique for the first time the boron contamination in LEC(B2O3)-CZ InP crystal. The content of boron contamination has been proved to be of ∼1016cm-3. |
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