| Abstract: | Crystallographic features of GaSb grown by the Bridgman procedure were investigated by scanning electron microscopy. Chemical etching and the electron channelling method were used to determine the position and crystallographic orientation of crystallites. A pronounced 〈110〉 texture was detected which was misaligned by 5÷28° with respect to the main axes of the ingots. Boundaries were categorized according to the orientation change accross them. Results were compared. The majority of small angle boundaries are probably caused by thermal stresses induced dislocation migration. |
