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Band edge offsets in strained (InGa)As-(AlGa)As heterostructures
Institution:1. Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou 510632, People''s Republic of China;2. State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275, People''s Republic of China;3. Micro-Discovery Scientific Corporation Limited, Shenzhen, Guangdong 518054, People''s Republic of China;1. Department of Physics and Astrophysics, University of Delhi, New Delhi, 110007, India;2. Department of Chemical Engineering and Technology, Indian Institute of Technology, (BHU), Varanasi, 221005, India;3. Department of Nano Convergence Engineering, Jeonbuk National University, Jeonju, Jeonbuk, 54896, Republic of Korea;4. Carbon Composite Research Centre, Department of Polymer-Nano Science and Technology, Jeonbuk National University, Jeonju, Jeonbuk, 54896, Republic of Korea
Abstract:The excitonic transitions between the ground electron and hole quantum well sublevels in strained InxGa1-xAs-AlyGa1-yAs multiple quantum well structures (x = 0.12−0.35 and y = 0.2−0.35) have been investigated by means of photoluminescence and photoconductivity measurements. The molecular beam epitaxy grown structures contained an AlyGa1-yAs matrix with one unstrained GaAs and three strained InxGa1-xAs quantum wells one of which was in the GaAs cladding layers. The ratio of the conduction band edhe line up to the band gap offset for the strained InxGa1-xAs-unstrained AlyGa1-yAs interface has been found to be 0.67 ± 0.08 for the studied regions of x and y.
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