Abstract: | Using CuIn2Se3.5 as source material epitaxial layers are obtained on (111)A- und (100)-oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 720—870 K. The composition of the films is between CuInSe2 and CuIn2Se3.5. The structural properties of the films are similar to those for CuInSe2 epitaxial layers and refer to a chalcopyrite-like structure. The films are always p-type conducting but different acceptor states are found in dependence on the substrate temperature. |