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Growth of well ordered Rh overlayers on Si surfaces: A field ion microscope study
Institution:1. Azerbaijan State Oil and Industry University, AZ1010 Baku, Azerbaijan;2. Institute of Physics, ANAS, AZ1143 Baku, Azerbaijan;3. Moscow Lomonosov State University, Chemistry Department, Leninskie Gory 1-3, Moscow 119991, Russia;4. Institute of Catalysis and Inorganic Chemistry, ANAS, AZ1143 Baku, Azerbaijan;5. Donostia International Physics Center (DIPC), Spain;6. Departamento de Física de Materiales, Facultad de Ciencias Químicas, UPV/EHU, Apdo. 1072, 20080 San Sebastián, Spain;7. IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Spain;8. Centro de Física de Materiales CFM-Materials Physics Center MPC, Centro Mixto CSIC-UPV/EHU, 20080 San Sebastián, Spain;9. Tomsk State University, Tomsk, 634050 Russia;10. Saint Petersburg State University, Saint Petersburg, 198504 Russia;1. State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;2. Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China;3. Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 689-798, Republic of Korea;4. Centre for Nanochemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China;5. Department of Biomedical Engineering, College of Engineering, Peking University, Beijing 100871, China;6. College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China;7. Collaborative Innovation Centre of Quantum Matter, Beijing 100871, China;8. International Centre for Quantum Materials, Peking University, Beijing 100871, China;9. Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea;10. Department of Physics, South University of Science and Technology of China, Shenzhen 518055, China;11. School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea;1. Department of Chemistry, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), University of Science and Technology of China, Hefei 230026, China;2. Jiangsu Collaborative Innovation Centre of Biomedical Functional Materials, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, China;3. Department of Chemistry and Collaborative Innovation Center for Nanomaterial Science and Engineering, Tsinghua University, Beijing 100084, China;4. NEST Laboratory, Department of Chemistry, College of Science, Shanghai University, Shanghai 200444, China;5. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
Abstract:Well ordered Rh overlayers have been grown on Si tip surfaces in ultrahigh vacuum. The field ion images of the overlayers grown on the Si{012} plane reveal two distinctive atomic structures. One has a diamond structure with an angle of 76° ± 2° and one has a rhombic structure with an angle of 66° + 2°. The former fits well to the atomic structure of the Rh layer of the RhSi(110) plane and the latter fits well to the structure of the Si(012) plane.
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