Abstract: | Epitaxial layers of AgGaSe2 with thicknesses in the range from 50 to 70 nm were deposited onto (111)A-oriented semi-insulating GaAs substrates by flash-evaporation in the substrate temperature range TS = 825 … 900 K. Films grown at TS ≦ 850 K are n-type conducting whereas p-type conductivity was observed at TS ≧ 875 K. In the p-type samples two acceptor states with ionization energies of 60 and 410 meV were found from an analysis of the electrical measurements. |