I–V characteristics and break down studies of Sb2O3 structures

I–V characteristics of sandwiched Al–Sb₂O₃–Al structures have been studied for different thicknesses. The current-voltage curves in general exhibit three regions, ohmic, non ohmic and breakdown regions. The breakdown voltage increases whereas the dielectric strength decreases with increase in Sb₂O₃ film thickness. The electrical breakdown studies have been done for dc and ac voltages and optical photomicrographs of breakdown patterns during different stages of voltage have been taken and the results are explained.