| Abstract: | Single crystals of BaFCl have been growth by flux technique using BaF2 and BaCl2. Etching with formic acid revealed dislocation etch pits on (001) cleavage faces of the crystals, at room temperature. The influence of etching parameters such as undersaturation, temperature and concentration of poison in the etchant is studied. Decreasing the undersaturation of formic acid by reducing the percentage of water and increasing the temperature of the etchant were found not to have any effect on the morphology of etch pits. However, as the CdCl2 poison concentration is gradually increased, the orientation of the pits change from 〈100〉 to 〈110〉 at high concentration. |
