Photoacoustic saturation spectra of some semiconducting group IV-A transition metal dichalcogenides |
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| Affiliation: | 1. Department of Chemistry, Faculty of Basic Sciences, Tarbiat Modares University, P.O. Box 14115-175, Tehran, Iran;2. College of Food and Bioengineering, Hezhou University, No. 18 West Ring Road, Hezhou, Guangxi 542899, PR China;1. Department of Pharmaceutical Sciences, School of Pharmacy, University of California-Irvine, USA;2. Institute for Genomics and Bioinformatics, School of Information and Computer Sciences, University of California-Irvine, USA;3. Center for the Neurobiology of Learning and Memory, University of California-Irvine, Irvine, USA;4. Division of Basic and Clinical Immunology, Department of Medicine, University of California Irvine, Irvine, CA 92697, USA;5. Department of Clinical Pharmacy, Jordan University of Science and Technology, Irbid 22110, Jordan |
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| Abstract: | Photoacoustic saturation spectra in some semiconductors as HfSe2, ZrS2 and HfS2 have been measured at energies above the fundamental absorption edge, where the photoacoustic signal is independent of the optical coefficient and the dips detected in the photoacoustic spectra may be ascribed to optical reflection effects inherent to the band structure. The comparison between our experimental data and those obtained by means of conventional and modulatory spectroscopic techniques proves that such method is a useful tool in order to determine the electronic structure of photoacoustically active semiconductors. |
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