| Abstract: | The electrical properties of CuInSe2 epitaxial layers on (111)A-, (110)-, and (100)-oriented GaAs substrates are investigated. At substrate temperatures Tsub ≧ 820 K the p-type conductivity observed is governed by an acceptor state with an ionization energy of about 110 meV independent of the substrate orientation. At Tsub ≦ 770 K three different acceptor states are found in dependence on the substrate orientation: 390 meV for (111)A-, 110 meV for (110)-, and a very shallow acceptor for (100)-oriented substrates. A possible correlation between these acceptor states and intrinsic defects is proposed. |
