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Anomalous change of d.c. conductivity with ambient conditions in slowly-deposited sputtered a-Si and a-Si:H |
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| Affiliation: | 1. Universidade Federal de São Paulo — ICT/UNIFESP, Brazil;2. Universidade do Vale do Paraíba — UNIVAP, Brazil;3. Instituto Tecnológico de Aeronáutica — ITA, Brazil;1. TU Wien, Institute for Sensor and Actuator Systems, Gusshausstrasse 27-29, 1040 Vienna, Austria;2. Ruđer Bošković Institute, Laboratory for Ion Beam Interactions, P.O.Box 180, 10002 Zagreb, Croatia;3. Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach, Austria |
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